Cena: |
Želi ovaj predmet: | 1 |
Stanje: | Nekorišćen sa felerom |
Garancija: | Ne |
Isporuka: | Pošta Post Express Lično preuzimanje |
Plaćanje: | Tekući račun (pre slanja) Pouzećem Lično |
Grad: |
Vršac, Vršac |
Proizvedeno u : Aziji
K12
Merenjem je ustanovljen RDS on od 9,2mOhm,umesto deklarisanih 4mOhm!
IRF1404 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1404
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 333 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 202 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 131 nC
Rise Time (tr): 190 nS
Drain-Source Capacitance (Cd): 1659 pF
Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm
Package: TO220AB