Cena: |
Stanje: | Nekorišćen |
Garancija: | Ne |
Isporuka: | Pošta Post Express Lično preuzimanje |
Plaćanje: | Tekući račun (pre slanja) Pouzećem Lično |
Grad: |
Vršac, Vršac |
Proizvedeno u : Aziji
K12
Merenjem je ustanovljen RDSon od 6,7mOhm.
IRF1407PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1407PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 150 nS
Drain-Source Capacitance (Cd): 890 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm
Package: TO-220A